Fig. 1
From: Protecting silver cultural heritage objects with atomic layer deposited corrosion barriers
ALD process: schematic of one cycle of Al2O3 ALD growth. The hydroxyl-terminated starting surface is exposed to a metal–organic precursor that reacts with the surface in a self-limiting reaction. Once the system is purged with an inert gas to remove excess precursors and by-products, a second co-reactant is introduced and reacts to form one monolayer of Al2O3 ALD. The ending hydroxyl-terminated surface is similar to the starting surface, allowing the process to be cycled to grow the desired film thickness